The mechanism of caesium intercalation of graphene. Europium underneath graphene on Ir(111): intercalation mechanism, magnetism, and band structure. Epitaxial graphene on 6H-SiC and Li intercalation. Virojanadara, C., Watcharinyanon, S., Zakharov, A. Simultaneous N-intercalation and N-doping of epitaxial graphene on 6H-SiC(0001) through thermal reactions with ammonia. Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation. Riedl, C., Coletti, C., Iwasaki, T., Zakharov, A. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Band-structure-corrected local density approximation study of semiconductor quantum dots and wires.
Growth of two-dimensional GaN in Na-4 mica nanochannels. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111). Electron–electron and electron-hole interactions in small semiconductor crystallites: The size dependence of the lowest excited electronic state. Graphitic nanofilms as precursors to wurtzite films: theory. Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well. A gallium nitride single-photon source operating at 200 K. Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures. Computational synthesis of single-layer GaN on refractory materials. Ab initio synthesis of single-layer III-V materials. Computational discovery of single-layer III-V materials. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal. Our results provide a foundation for discovery and stabilization of 2D nitrides that are difficult to prepare via traditional synthesis. Moreover, we establish that graphene plays a critical role in stabilizing the direct-bandgap (nearly 5.0 eV), 2D buckled structure. We theoretically predict and experimentally validate that the atomic structure of 2D GaN grown via MEEG is notably different from reported theory 2, 3, 4. Here we demonstrate the synthesis of 2D gallium nitride (GaN) via a migration-enhanced encapsulated growth (MEEG) technique utilizing epitaxial graphene.
A gap, however, remains between the theoretical prediction of 2D nitrides ‘beyond hBN’ 2, 3 and experimental realization of such structures. Among these materials, layered hexagonal boron nitride (hBN), with its wide bandgap energy ( ∼5.0–6.0 eV), has clearly established that 2D nitrides are key to advancing 2D devices 1. The spectrum of two-dimensional (2D) and layered materials ‘beyond graphene’ offers a remarkable platform to study new phenomena in condensed matter physics.
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